[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Space radiation effects on SiC power device reliability
JM Lauenstein, MC Casey, RL Ladbury… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …
catastrophic failure. Test procedures and data interpretation must consider the impact that …
Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
The effects of ionizing radiation on β-Ga 2 O 3 metal-oxide-semiconductor field-effect
transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy (SiO …
transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy (SiO …
Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons
A Akturk, R Wilkins, J McGarrity… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Experimental investigation of neutron induced single event failures and the associated
device cross sections as well as low altitude failure-in-time (FIT) curves in silicon (Si) and …
device cross sections as well as low altitude failure-in-time (FIT) curves in silicon (Si) and …
A simulation-based comparison between Si and SiC MOSFETs on single-event burnout susceptibility
X Zhou, Y Jia, D Hu, Y Wu - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
This paper presents the simulation-based comparison between silicon (Si) and silicon
carbide (SiC) MOSFETs on the single-event burnout (SEB) performance for the first time …
carbide (SiC) MOSFETs on the single-event burnout (SEB) performance for the first time …
Displacement damage and total ionisation dose effects on 4H‐SiC power devices
P Hazdra, S Popelka - IET Power Electronics, 2019 - Wiley Online Library
A comprehensive study of displacement damage and total ionisation dose effects on 4H‐
silicon carbide power devices is presented. Power diodes and transistors produced by …
silicon carbide power devices is presented. Power diodes and transistors produced by …
Application of total ionizing dose radiation test standards to SiC MOSFETs
Q Yu, W Ali, S Cao, H Wang, H Lv, Y Sun… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
The total ionizing dose (TID) test standards have been developed based on silicon devices
to evaluate the TID response of MOS devices for space use. To estimate the applicability of …
to evaluate the TID response of MOS devices for space use. To estimate the applicability of …
SiC MOSFET threshold-stability issues
AJ Lelis, R Green, DB Habersat - Materials Science in Semiconductor …, 2018 - Elsevier
This work provides additional insight into the threshold-voltage instability effect generally
observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test …
observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test …