Design and performance analysis of Si-SiGe heterostructure based double gate feedback FET
The design and performance analysis of a Si-SiGe heterostructure-based double gate
feedback field-effect transistor (HDG FBFET) are presented in this paper. The proposed …
feedback field-effect transistor (HDG FBFET) are presented in this paper. The proposed …
Temperature analysis of lead zirconate titanate GAA-NCFET nanowire with interface trap charges
V Kumar, RK Maurya, K Mummaneni - Materials Science and Engineering …, 2024 - Elsevier
This article explores the static and trap analysis of lead zirconate titanate negative
capacitance gate-all-around (PZT NC GAAFET) nanowire at different temperature using …
capacitance gate-all-around (PZT NC GAAFET) nanowire at different temperature using …
Optimization and analysis of Si/SiGe strained vertically stacked heterostructure on insulator FeFinFET for high performance analog and RF applications
As semiconductor technology advances, the exploration of novel materials and device
architectures becomes imperative to meet the growing demands of integrated circuits for …
architectures becomes imperative to meet the growing demands of integrated circuits for …
Design and performance analysis of tri-layered strained Si/Si1–x Ge x/Si heterostructure DG feedback FET
This work presents the design and performance analysis of a tri-layered strained Si/Si 1− x
Ge x/Si heterostructure double gate feedback field-effect transistor (DG FBFET). The …
Ge x/Si heterostructure double gate feedback field-effect transistor (DG FBFET). The …
Preparation and Photoelectric Properties of SI: B Nanowires with Thermal Evaporation Method
Y Feng, P Liang, Z Xia, W Yang, H Peng… - Available at SSRN … - papers.ssrn.com
Silicon nanowires (SiNWs), as a novel type of nanomaterial, exhibit many outstanding
properties, including the quantum confinement effect, quantum tunneling, Coulomb blocking …
properties, including the quantum confinement effect, quantum tunneling, Coulomb blocking …