Nanostructured perovskites for nonvolatile memory devices
Q Liu, S Gao, L Xu, W Yue, C Zhang, H Kan… - Chemical Society …, 2022 - pubs.rsc.org
Perovskite materials have driven tremendous advances in constructing electronic devices
owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties …
owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties …
Recent progress on emerging transistor‐based neuromorphic devices
Human brain outperforms the current von Neumann digital computer in many aspects, such
as energy efficiency and fault‐tolerance. Inspired by human brain, neuromorphic …
as energy efficiency and fault‐tolerance. Inspired by human brain, neuromorphic …
CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory
Ferroelectric memory has been substantially researched for several decades as its potential
to obtain higher speed, lower power consumption, and longer endurance compared to …
to obtain higher speed, lower power consumption, and longer endurance compared to …
Wakeup-free and endurance-robust ferroelectric field-effect transistor memory using high pressure annealing
Wakeup-free and endurance-robust HfZrO 2 (HZO) ferroelectric field-effect transistor
(FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas …
(FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas …
Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors
In this work, we demonstrate highly scaled, non-volatile memory transistors with ferroelectric
Zr-doped HfO 2 (HZO) as gate insulator.-gate transistors with gate length~ 30 nm and width …
Zr-doped HfO 2 (HZO) as gate insulator.-gate transistors with gate length~ 30 nm and width …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Ferroelectric and interlayer co-optimization with in-depth analysis for high endurance FeFET
In face of the critical endurance issue, for the first time we take a holistic perspective to co-
optimize the ferroelectric materials and interlayer in FeFET. Compared to the common HZO …
optimize the ferroelectric materials and interlayer in FeFET. Compared to the common HZO …
Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices
We demonstrate a HfZrO 2 (HZO) ferroelectric field-effect transistor fabricated on a silicon-on-
insulator substrate, targeting MHz synaptic device applications. Stable multistate weights …
insulator substrate, targeting MHz synaptic device applications. Stable multistate weights …
A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel
We successfully developed a high-performance FeFET memory device by integrating ZrO 2
anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO 2 …
anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO 2 …