Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

III-nitride InGaN material is an ideal candidate for the fabrication of high performance
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

The fabrication processes of p-type regions for vertical GaN power devices are investigated.
A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor …

Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …

Using hybrid density functional theory, we address point defects susceptible to cause charge
compensation upon Mg doping of GaN. We determine the free energy of formation of the …

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN |
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …

Hall effect and capacitance-voltage C (V) measurements were performed on p-type GaN: Mg
layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping …

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …