Optical Property Behaviors of CsPbBr3 Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process
M Chen, Y Yuan, Z Wang, X Shen, Y Liu… - Crystal Growth & …, 2020 - ACS Publications
Recently, all-inorganic cesium lead halide perovskite CsPbX3 (X= Cl, Br, and I) colloidal
nanoparticles (NPs) have attracted tremendous attention owing to their potential …
nanoparticles (NPs) have attracted tremendous attention owing to their potential …
General route for the decomposition of InAs quantum dots during the capping process
The effect of the capping process on the morphology of InAs/GaAs quantum dots (QDs) by
using different GaAs-based capping layers (CLs), ranging from strain reduction layers to …
using different GaAs-based capping layers (CLs), ranging from strain reduction layers to …
Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots
T Yamamura, T Kiba, X Yang, J Takayama… - Journal of Applied …, 2014 - pubs.aip.org
The growth-temperature dependence of the optical spin-injection dynamics in self-
assembled quantum dots (QDs) of In 0.5 Ga 0.5 As was studied by increasing the sheet …
assembled quantum dots (QDs) of In 0.5 Ga 0.5 As was studied by increasing the sheet …
Improvement of performance of GaAs solar cells by inserting self-organized InAs/InGaAs quantum dot superlattices
This study demonstrates the feasibility of improving the performance of a quantum dot (QD)
intermediate band solar cell (SC) by capping an InGaAs layer on the InAs QDs and inserting …
intermediate band solar cell (SC) by capping an InGaAs layer on the InAs QDs and inserting …
Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers
D Hu, CCO McPheeters, ET Yu, DM Schaadt - Nanoscale research letters, 2011 - Springer
A new measure to enhance the performance of InAs quantum dot solar cell is proposed and
measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in …
measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in …
Investigation of semiconductor quantum dots for waveguide electroabsorption modulator
In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of
an electroabsorption modulator (EAM). The QD-EAM is a pin ridge waveguide structure with …
an electroabsorption modulator (EAM). The QD-EAM is a pin ridge waveguide structure with …
Temperature-dependent photoluminescence study of 1.3 μm undoped InAs∕ InGaAs∕ GaAs quantum dots
In As∕ In Ga As∕ Ga As quantum dot (QD) structures are commonly employed for 1.3 μ m
emission. However, reduction in the thermal stability of the undoped In As∕ In Ga As∕ Ga …
emission. However, reduction in the thermal stability of the undoped In As∕ In Ga As∕ Ga …
Low energy Ar+ sputtering-induced GaAs quantum dot formation and evolution
GaAs quantum dots formed by Ar+ bombardment under normal beam incidence are
investigated in both sputtering time and energy domains. When ion energy is maintained at …
investigated in both sputtering time and energy domains. When ion energy is maintained at …
Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator
We report the characteristics of 1.3 μ m electroabsorption modulators (EAMs) utilizing the
InAs/InGaAs/GaAs quantum dot (QD) structures. While extinction ratio of∼ 10 dB was …
InAs/InGaAs/GaAs quantum dot (QD) structures. While extinction ratio of∼ 10 dB was …
Electroabsorption Characteristics of Single-Mode 1.3-m InAs–InGaAs–GaAs Ten-Layer Quantum-Dot Waveguide
CY Ngo, SF Yoon, SY Lee, HX Zhao… - IEEE Photonics …, 2010 - ieeexplore.ieee.org
InAs-InGaAs-GaAs quantum-dot (QD) structures are extensively investigated for 1.3-lasers
with applications in low-cost metropolitan access and local area networks. For the purpose …
with applications in low-cost metropolitan access and local area networks. For the purpose …