Vapor phase growth of semiconductor nanowires: key developments and open questions
L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
Semiconductor nanowires: to grow or not to grow?
PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
Epitaxy of semiconductor–superconductor nanowires
P Krogstrup, NLB Ziino, W Chang, SM Albrecht… - Nature materials, 2015 - nature.com
Controlling the properties of semiconductor/metal interfaces is a powerful method for
designing functionality and improving the performance of electrical devices. Recently …
designing functionality and improving the performance of electrical devices. Recently …
Interface dynamics and crystal phase switching in GaAs nanowires
Controlled formation of non-equilibrium crystal structures is one of the most important
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
Temporal constraints on hydrate-controlled methane seepage off Svalbard
Methane hydrate is an icelike substance that is stable at high pressure and low temperature
in continental margin sediments. Since the discovery of a large number of gas flares at the …
in continental margin sediments. Since the discovery of a large number of gas flares at the …
Predictive modeling of self-catalyzed III-V nanowire growth
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks
Selective-area growth is a promising technique for enabling of the fabrication of the scalable
III–V nanowire networks required to test proposals for Majorana-based quantum computing …
III–V nanowire networks required to test proposals for Majorana-based quantum computing …
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography
AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh… - Nano …, 2014 - ACS Publications
We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …
Stable self-catalyzed growth of III–V nanowires
J Tersoff - Nano letters, 2015 - ACS Publications
Nanowire growth has generally relied on an initial particle of a catalyst such as Au to define
the wire diameter and stabilize the growth. Self-catalyzed growth of III–V nanowires avoids …
the wire diameter and stabilize the growth. Self-catalyzed growth of III–V nanowires avoids …
Field effect enhancement in buffered quantum nanowire networks
III–V semiconductor nanowires have shown great potential in various quantum transport
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
experiments. However, realizing a scalable high-quality nanowire-based platform that could …