Origin of ferroelectric phase stabilization via the clamping effect in ferroelectric hafnium zirconium oxide thin films
The presence of the top electrode on hafnium oxide‐based thin films during processing has
been shown to drive an increase in the amount of metastable ferroelectric orthorhombic …
been shown to drive an increase in the amount of metastable ferroelectric orthorhombic …
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic
applications owing to their superior thickness scaling of ferroelectric stability and …
applications owing to their superior thickness scaling of ferroelectric stability and …
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
In the last decades, ferroelectricity has been discovered in Si-doped HfO2 and Hf1–x Zr x O2
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
A ferroelectric-gate fin microwave acoustic spectral processor
Wireless communication through dynamic spectrum allocation is essential to accommodate
increasing data traffic. This requires massive arrays of radiofrequency filters for adaptive …
increasing data traffic. This requires massive arrays of radiofrequency filters for adaptive …
High Quality Factors in Superlattice Ferroelectric Hf0.5Zr0.5O2 Nanoelectromechanical Resonators
The discovery of ferroelectricity and advances in creating polar structures in atomic-layered
hafnia-zirconia (Hf x Zr1–x O2) films spur the exploration of using the material for novel …
hafnia-zirconia (Hf x Zr1–x O2) films spur the exploration of using the material for novel …
Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films
HA Hsain, Y Lee, S Lancaster… - … Applied Materials & …, 2022 - ACS Publications
Hafnia–zirconia (HfO2–ZrO2) solid solution thin films have emerged as viable candidates for
electronic applications due to their compatibility with Si technology and demonstrated …
electronic applications due to their compatibility with Si technology and demonstrated …
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2
Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago,
fluorite‐structured ferroelectric thin films have attracted much research attention due to their …
fluorite‐structured ferroelectric thin films have attracted much research attention due to their …
[HTML][HTML] Wake-up and fatigue mechanisms in ferroelectric Hf0. 5Zr0. 5O2 films with symmetric RuO2 electrodes
The mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide
thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative …
thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative …
Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films
The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick
hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has …
hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has …
Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf0.5Zr0.5O2 Thin Films
Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that
include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present …
include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present …