Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation
Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low
trap densities is the key to high-performance metal–oxide–semiconductor (MOS) devices …
trap densities is the key to high-performance metal–oxide–semiconductor (MOS) devices …
In situ Y2O3 on p-In0. 53Ga0. 47As—Attainment of low interfacial trap density and thermal stability at high temperatures
By in situ depositing Y 2 O 3 on a pristine p-In 0.53 Ga 0.47 As surface under ultra-high
vacuum, we have attained a low interfacial trap density (D it) of (2–5)× 10 11 eV− 1 cm− 2 …
vacuum, we have attained a low interfacial trap density (D it) of (2–5)× 10 11 eV− 1 cm− 2 …
Electrically sign-reversible topological Hall effect in a top-gated topological insulator grown on europium iron garnet
JF Wong, KHM Chen, JM Chia, ZP Huang, SX Wang… - Physical Review B, 2024 - APS
The topological Hall effect (THE), an electrical transport signature of systems with chiral spin
textures like skyrmions, has been observed recently in topological insulator (TI)-based …
textures like skyrmions, has been observed recently in topological insulator (TI)-based …
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric
We have demonstrated a record low 85 mV dec− 1 subthreshold slope (SS) at 300 K among
the planar inversion-channel InGaAs metal-oxide-semiconductor field-effect transistors …
the planar inversion-channel InGaAs metal-oxide-semiconductor field-effect transistors …
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly …
Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-
germanium (Ge) in the (001) orientation at substrate temperatures lower than 300° C …
germanium (Ge) in the (001) orientation at substrate temperatures lower than 300° C …
Effective passivation of p-and n-type In0. 53Ga0. 47As in achieving low leakage current, low interfacial traps, and low border traps
We have attained low leakage current, low interfacial traps, and low border traps by
effectively passivating both p-and n-In0. 53Ga0. 47As (InGaAs) surfaces using the same …
effectively passivating both p-and n-In0. 53Ga0. 47As (InGaAs) surfaces using the same …
[HTML][HTML] Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity
Achieving high material perfection in aluminum (Al) films and their associated Al/AlO x
heterostructures is essential for enhancing the coherence time in superconducting quantum …
heterostructures is essential for enhancing the coherence time in superconducting quantum …
Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
The capped Si expels completely the Ge dimers on top of the epi Ge (001)-2× 1 and exhibits
a multiphase electronic structure consisting of strained surface atoms bonded with Ge in the …
a multiphase electronic structure consisting of strained surface atoms bonded with Ge in the …
Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study
By using synchrotron radiation photoemission, this study investigates the room-temperature
surface electronic structure of Si 1− x Ge x (001)-2× 1 grown by molecular-beam epitaxy on …
surface electronic structure of Si 1− x Ge x (001)-2× 1 grown by molecular-beam epitaxy on …
In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability
Single-crystal Si films six-monolayers in thickness were epitaxially grown on Ge (001)
surface to minimize the formation of undesirable GeO x with subsequent deposition of HfO 2 …
surface to minimize the formation of undesirable GeO x with subsequent deposition of HfO 2 …