This paper presents a split-gate version of the Resurf Stepped Oxide (RSO) MOSFET.
Splitting the gate enables a drastic reduction of the gate-to-drain capacitance intrinsic to the …

An ultralow specific on-resistance (R on, sp) integrable silicon-on-insulator (SOI) power
lateral MOSFET is proposed. The MOSFET features double trenches: an oxide trench in the …

For low-voltage power MOSFETs technology, Field Plate (FP) and Superjunction (SJ)
structures have been applied to reduce on-resistance drastically. As one of the approach for …

The interaction of fabrication processes and device performance in RSO (resurf stepped
oxide) transistors is explored in this paper. Critical process steps for achieving good control …

We propose a 100-V class two-step-oxide Field-Plate MOSFET (2-step FP-MOSFET), which
is formed by two steps of thick-oxide to simplify the structure and fabrication process. By …

A shield gate trench MOSFET (SGTMOS) featuring narrow gate (NG) architecture and low-k
dielectric layer (LDL), namely NL-SGTMOS, is proposed in this letter. By eliminating the …

A lateral trench power MOSFET in the 250V class, with a reduced specific on-resistance is
proposed. Simulation results of an optimized device structure exhibits a low specific on …

We propose a machine learning approach for power device design that consists of TCAD
simulation and line Bayesian optimization. It has the advantage of multivariable optimization …

This paper presents an optimized split-gateenhanced trench MOSFET with dual channels
(DSGEUMOS). The 2-D device simulator ATLAS is used to investigate the characteristics of …

The on-resistance limit of 100 V-class Field-Plate (FP) trench power MOSFETs was
analyzed by TCAD simulation. In the previous works, the lateral pitch narrowing effect to …