The laser bandwidth and the wavelength stability are among the important factors
contributing to the CD Uniformity budget for a 45 nm and 32nm technology node NV …

M. Terry et al.,“Behavior of lens aberrations as a function of wave length on KrF and ArF
lithography scanners.” Proc. SPIE Optical Microlithography XIV 4346, 15 (2001), 11 pages …

Patterning solutions based on ArF immersion lithography are the fundamental enablers of
device scaling. In order to meet the challenges of industry technology roadmaps, tool …

Double-patterning ArF immersion lithography continues to advance the patterning resolution
and overlay requirements and has enabled the continuation of semiconductor bit-scaling …

With the implementation of multi-patterning ArF-immersion for sub 20nm integrated circuits
(IC), advances in equipment monitoring and control are needed to support on-wafer yield …

In this work, we model the effects of excimer laser bandwidth on optical proximity effects in
high-NA ArF dry and immersion lithography. We quantify the errors introduced by using …

Over the years, Lithography Engineers continue to focus on CD control, overlay and process
capability to meet current node requirements for yield and device performance. Reducing or …

In this paper we discuss a laser focus drilling technique which has recently been developed
for advanced immersion lithography scanners to increase the depth of focus and therefore …

As chipmakers continue to reduce feature sizes and shrink CDs on the wafer to meet
customer needs, Cymer continues developing light sources that enable advanced …

In the manufacturing of advanced integrated circuits, ArF immersion lithography remains the
primary tool for the patterning process. With the increasing requirements for critical …