Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more
and more interest in the last 20 years as a potential material for applications such as thin-film …

The paper presents results for zinc oxide films grown at low-temperature regime by atomic
layer deposition (ALD). We discuss electrical properties of such films and show that low …

In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …

The initial phases of the ALD growth of ZnO have been examined. It is shown that ZnO
exhibits an island-like growth on Si, layer-by-layer on GaN, whereas on sapphire, the growth …

ZnO grown by atomic layer deposition (ALD) is an interesting material for electronic
applications requiring low processing temperature. Herein, it is shown that the electrical …

Deposition of ZnS and ZnO by the atomic layer deposition technique is performed using both
dimethylzinc (DMZn) and diethylzinc (DEZn) as the metal source and H 2 S or H 2 O as the …

Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET)
substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140° C) …

Arsenic-doped ZnO films were formed by thermal annealing of epitaxial ZnO films grown by
Atomic Layer Deposition (ALD) in arsenic atmosphere at temperature 850–950° C. X-ray …

We present ultraviolet–visible (UV/vis) range photodetectors (PDs) based on thin film ZnO
(n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) …