The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Progress in monolithic integration of III-V semiconductor heterostructures on silicon
promotes the development of silicon-based integrated optoelectronics. Here, we report on …

Metal chalcogenides such as copper zinc tin sulfide (CZTS) have been intensively studied
as potential photovoltaic cell materials, but their viability have been marred by crystal defects …

The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …

This paper presents intentional doping of n-and p-type GaAs 0.19 P 0.76 N 0.05 alloys by
molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium …

This study presents two-wavelength excited photocurrent (TWEPC) measurements in GaP
1− x N x grown by metalorganic vapor phase epitaxy. TWEPC measurements reveal that …

In this work, the effect of annealing time on structural, optical, and thermal properties of V x O
y used as functional material in microbolometer applications is studied. A suitable thermal …

Quaternary dilute nitride compound semiconductors like Ga As y P 1− x− y N x and Ga 1− z
In z P 1− x N x are lattice matched with silicon when y= 4.7* x− 0.1 and z= 2.2* x− 0.044 and …

GaN x P 1-x and GaN x P 1-xy As y highly mismatched alloys (x≤ 0.025 and y≤ 0.4),
promising candidates for intermediate band solar cell applications, were studied by optical …

The electronic band structure of Ga (PAsN) with a few percent of nitrogen is calculated in the
whole composition range of Ga (PAs) host using density functional methods including the …