Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Dual-functional light-emitting and photo-detecting GaAsPN heterostructures on silicon

VV Fedorov, LN Dvoretckaia, AM Mozharov… - Materials Science in …, 2023 - Elsevier
Progress in monolithic integration of III-V semiconductor heterostructures on silicon
promotes the development of silicon-based integrated optoelectronics. Here, we report on …

Electronics of anion hot injection-synthesized Te-functionalized kesterite nanomaterial

KC Nwambaekwe, M Masikini, P Mathumba… - Nanomaterials, 2021 - mdpi.com
Metal chalcogenides such as copper zinc tin sulfide (CZTS) have been intensively studied
as potential photovoltaic cell materials, but their viability have been marred by crystal defects …

Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys

K Zelazna, M Gladysiewicz, MP Polak, S Almosni… - Scientific reports, 2017 - nature.com
The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …

Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

K Yamane, K Sato, H Sekiguchi, H Okada… - Journal of Crystal …, 2017 - Elsevier
This paper presents intentional doping of n-and p-type GaAs 0.19 P 0.76 N 0.05 alloys by
molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium …

Photocurrent enhancement by below bandgap excitation in GaPN

A Qayoom, S Ferdous, S Yagi… - Japanese Journal of …, 2023 - iopscience.iop.org
This study presents two-wavelength excited photocurrent (TWEPC) measurements in GaP
1− x N x grown by metalorganic vapor phase epitaxy. TWEPC measurements reveal that …

Thermal annealing effects on microstructural and thermo-optical properties of V/V2O5 alternating layers structure

A Khalfaoui, S Ilahi, S Ktifa, N Yacoubi - Optics & Laser Technology, 2022 - Elsevier
In this work, the effect of annealing time on structural, optical, and thermal properties of V x O
y used as functional material in microbolometer applications is studied. A suitable thermal …

Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si …

K Kharel, A Freundlich - Journal of Applied Physics, 2018 - pubs.aip.org
Quaternary dilute nitride compound semiconductors like Ga As y P 1− x− y N x and Ga 1− z
In z P 1− x N x are lattice matched with silicon when y= 4.7* x− 0.1 and z= 2.2* x− 0.044 and …

Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs

M Wełna, K Żelazna, A Létoublon, C Cornet… - Solar Energy Materials …, 2019 - Elsevier
GaN x P 1-x and GaN x P 1-xy As y highly mismatched alloys (x≤ 0.025 and y≤ 0.4),
promising candidates for intermediate band solar cell applications, were studied by optical …

Electronic band structure of nitrogen diluted Ga (PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

MP Polak, R Kudrawiec, O Rubel - Journal of Applied Physics, 2019 - pubs.aip.org
The electronic band structure of Ga (PAsN) with a few percent of nitrogen is calculated in the
whole composition range of Ga (PAs) host using density functional methods including the …