Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development
This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …
Flexible and high-performance amorphous indium zinc oxide thin-film transistor using low-temperature atomic layer deposition
J Sheng, HJ Lee, S Oh, JS Park - ACS applied materials & …, 2016 - ACS Publications
Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by
atomic layer deposition (ALD) using [1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium …
atomic layer deposition (ALD) using [1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium …
Atomic-layer-deposition of indium oxide nano-films for thin-film transistors
Q Ma, HM Zheng, Y Shao, B Zhu, WJ Liu… - Nanoscale research …, 2018 - Springer
Abstract Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using
cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2) as precursors. The In 2 O 3 …
cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2) as precursors. The In 2 O 3 …
Design of InZnSnO semiconductor alloys synthesized by supercycle atomic layer deposition and their rollable applications
Amorphous InGaZnO semiconductors have been rapidly developed as active charge-
transport materials in thin film transistors (TFTs) because of their cost effectiveness …
transport materials in thin film transistors (TFTs) because of their cost effectiveness …
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
A low-leakage zinc oxide transistor by atomic layer deposition
In this work, we report an atomic layer deposited (ALD) zinc oxide (ZnO) transistor with low
off-state leakage current ()~ A/at high temperatures up to 147° C, measured by devices with …
off-state leakage current ()~ A/at high temperatures up to 147° C, measured by devices with …
Performance and Stability Enhancement of In–Sn–Zn–O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition
J Sheng, JH Han, WH Choi, J Park… - ACS applied materials & …, 2017 - ACS Publications
Silicon dioxide (SiO2) films were synthesized by plasma-enhanced atomic layer deposition
(PEALD) using BTBAS [bis (tertiarybutylamino) silane] as the precursor and O2 plasma as …
(PEALD) using BTBAS [bis (tertiarybutylamino) silane] as the precursor and O2 plasma as …
Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO)
channels prepared by the atomic layer deposition process were investigated with varying …
channels prepared by the atomic layer deposition process were investigated with varying …
Effects of channel thickness on electrical performance and stability of high-performance InSnO thin-film transistors
Q Li, J Dong, D Han, Y Wang - Membranes, 2021 - mdpi.com
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-
cost integrated circuits (IC). In the present work, we demonstrate the high-performance …
cost integrated circuits (IC). In the present work, we demonstrate the high-performance …
High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing
T Pi, D Xiao, H Yang, G He, X Wu, W Liu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, we report high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-
film transistors (TFTs) with atomic layer deposited Al 2 O 3 dielectric processed at a minimal …
film transistors (TFTs) with atomic layer deposited Al 2 O 3 dielectric processed at a minimal …