As smaller structures are being increasingly adopted in the semiconductor industry, the
performance of memory and logic devices is being continuously improved with innovative …

Background: Scatterometry is a fast, indirect, and nondestructive optical method for quality
control in the production of lithography masks. To solve the inverse problem in compliance …

This paper reports on the experimental validation of adapting the multilayer periodicity of an
EUV mask to mitigate pattern shifts at wafer level. This EUV specific pattern shift will …

Diese Dissertation beschäftigt sich mit der Kombination aus verlässlicher Fehlerkontrolle
und datenbasierter Approximation um nicht-intrusive und zuverlässige Algorithmen zur …

Mueller matrix spectroscopic ellipsometry becomes increasingly important for determining
structural parameters of periodic line gratings. Because of the anisotropic character of …

The performance of CD-SEMs directly affects the measured values of critical dimensions
(CDs) at the time of their measurement. Tracking the performance of CD-SEMs is necessary …

The precise and accurate determination of critical dimensions (CDs) of photo masks and
their uncertainties is relevant to the lithographic process. Scatterometry is a fast, non …

Due to their short wavelength (a few nanometers to approx. 0.1 nm), EUV radiation and X-
rays are well suited to investigate structures with dimensions in the nanometer range. In …

EUV photomasks utilize a multilayer stack to provide high and uniform EUV reflectance and
a patterned absorber which defines the features on the mask. Illuminating at an oblique …

π λ kk wobei λ die Wellenlänge bezeichnet und ki und kf die Wellenvektoren für die
einfallende und gestreute Strahlung. Wie im Artikel zur Größenbestimmung von …