Electron beam pumping is a promising technique to fabricate compact and efficient light
emitters (lamps or lasers) in those spectral ranges where electrical injection is problematic …

Deep ultraviolet (UV) optical emission below 250 nm (∼ 5 eV) in semiconductors is
traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown …

Conventional ultraviolet lamps for disinfection emit radiation in the 255–270 nm range,
which poses a high risk of causing cancer and cataracts. To address these concerns, solid …

Al y Ga 1− y N quantum dots (QDs) have been grown by molecular beam epitaxy on Al x Ga
1− x N (0001) using a 2-dimensional–3-dimensional growth mode transition that leads to the …

Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued
in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) …

AlGaN based light emitting diodes (LEDs) will play a key role for the development of
applications in the ultra-violet (UV). In the UVB region (280–320 nm), phototherapy and …

The optical properties of Al y Ga 1-y N quantum dots (QDs), with y= 0 or y= 0.1, in an Al x Ga
1− x N matrix are studied. The influence of the QD layer design is investigated pointing out …

In this paper, we describe the growth and characterization of≈ 530 nm thick superlattices
(100 periods) of Al x Ga 1-x N/AlN (0⩽ x⩽ 0.1) Stranski–Krastanov quantum dots (QDs) for …

InGaN/GaN nanostructures form the active region of III-nitride emitters (light emitting diodes,
laser diodes, single photon emitters) in the visible spectral range. In order to understand the …

The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure,
which is extremely promising for realization of UV photonics in general and room …