Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

The paper reviews applications of ABC-model to interpret internal quantum efficiency and its
droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and …

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were
monolithically grown on Si (111) by molecular beam epitaxy, with the emission …

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=
A n+ B n 2+ C n 3+ f (n)⁠, where f (n) represents carrier leakage out of the active region. The …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

We have investigated for the first time the impact of electron overflow on the performance of
nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein …

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN
quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN …

We discuss the challenges of light‐emitting diodes in view of their application to solid‐state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …

An analytic model is developed for the droop in the efficiency-versus-current curve for light-
emitting diodes (LEDs) made from semiconductors having strong asymmetry in carrier …

III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with
increasing injection current (droop). Auger recombination is often seen as primary cause of …