In the present work, we investigate the anodization of Ta in a K 2 HPO 4 containing glycerol
electrolyte at elevated temperatures (180° C). Under optimized conditions, uniformly over …

The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric
as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future …

Dc reactive sputtering was used to deposit tantalum metal/oxide periodic nanometric
multilayers using the artful technique namely, the reactive gas pulsing process (RGPP) …

Electrical properties of mixed HfO2–Ta2O5 films (10; 15nm) deposited by rf sputtering on Si
have been studied from the view point of their applications as high-k layers, by standard …

The nanomechanical properties of pure and doped Ta 2 O 5 films (100 nm) on Si, and the
effect of short time (10 s) microwave irradiation are studied by nanoindentation testing. The …

In this paper conduction mechanisms which could govern the electron transport through
high-k dielectrics are summarized. The influence of various factors–the type of high-k …

The response of Ti-doped Ta 2 O 5 stacked films (4–6 nm) to constant current stress (CCS)
under gate injection has been investigated. Two doping methods ('surface'and'bulk'doping …

The boundary of the zone in which sputtered atoms are thermalized in the substrate–target
drift space during the ion-plasma magnetron deposition of films is determined theoretically …

Hf-doped Ta 2 O 5 thin films are studied with respect to their composition, dielectric and
electrical properties. The incorporation of Hf is performed by sputtering of a 0.7 nm thick Hf …

The framework of tunnelling states in amorphous media provides the dissipative mechanism
that imposes fundamental limits on the performances of ultra-high-Q optical and microwave …