Recent advances in 2D MXenes for photodetection
A new class of 2D transition metal carbides, carbonitrides and nitrides, termed MXenes, has
emerged as a new candidate for many applications in electronics, optoelectronics, and …
emerged as a new candidate for many applications in electronics, optoelectronics, and …
[HTML][HTML] Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Recent advances in 2D‐MXene based nanocomposites for optoelectronics
MXenes have attracted significant attention from the scientific community because of various
unique properties that make them appropriate for various attractive applications. As a fast …
unique properties that make them appropriate for various attractive applications. As a fast …
Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP (0 0 1))-ζ (4× 2) reconstructed surfaces
In this work, we perform a theoretical study of the ζ (4× 2) reconstructed surfaces of Bi/InAs (0
0 1) and Bi/InP (0 0 1). We have used the density-functional theory (DFT) within the local …
0 1) and Bi/InP (0 0 1). We have used the density-functional theory (DFT) within the local …
Structural and opto-electronic properties of InP1− xBix bismide alloys for MID− infrared optical devices: A DFT+ TB-mBJ study
Using full-potential linearized augmented plane wave (FP-LAPW) method within density
functional theory (DFT), we have studied the structural and opto-electronic properties of zinc …
functional theory (DFT), we have studied the structural and opto-electronic properties of zinc …
Effects of Bi on band gap bowing in InP1-xBix alloys
The effects of Bi in InP_1-xBix ternary semiconductor alloys are studied based on first-
principles. The mBJLDA potential is used to obtain accurate band structures. The band gap …
principles. The mBJLDA potential is used to obtain accurate band structures. The band gap …
A density functional theory investigation of the structural and optoelectronic properties of InP1− xBix alloys
M Gandouzi, F Hedhili, N Rekik - Computational materials science, 2018 - Elsevier
In this work, we report a theoretical investigation of the structural, electronic and optical
properties of InP 1− x Bi x alloys. The study has been carried out by varying up the fraction x …
properties of InP 1− x Bi x alloys. The study has been carried out by varying up the fraction x …
Modified band alignment method to obtain hybrid functional accuracy from standard DFT: Application to defects in highly mismatched III-V: Bi alloys
This paper provides an accurate theoretical defect energy database for pure and Bi-
containing III-V (III-V: Bi) materials and investigates efficient methods for high-throughput …
containing III-V (III-V: Bi) materials and investigates efficient methods for high-throughput …
[HTML][HTML] Anomalous photoluminescence in InP1−xBix
Low temperature photoluminescence (PL) from InP1− xBix thin films with Bi concentrations
in the 0–2.49% range reveals anomalous spectral features with strong and very broad …
in the 0–2.49% range reveals anomalous spectral features with strong and very broad …
[HTML][HTML] Magnetotransport and superconductivity in InBi films grown on Si (111) by molecular beam epitaxy
Bismuth-containing compounds inherit the high spin-orbit coupling and bandgap bowing
effects of the Bi atom. Here, we report the growth of InBi films using molecular beam epitaxy …
effects of the Bi atom. Here, we report the growth of InBi films using molecular beam epitaxy …