Influence of Gaussian doping in transistor regions, doping gradient step size (σ), interface
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …

This article introduces a novel vertical doping-less tunnel field-effect transistor (TFET), in
which instead of using metal to induce charge plasma in the source region, cladding layer is …

In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET)
has been analyzed with different engineering techniques such as bandgap engineering …

A density functional theory (DFT)+ U method based on linear response (LR) theory was
applied to investigate the electronic structures of a Co-based ternary full Heusler alloy …

The concept of dual metal and double gate in Vertical TFET is presented to show the
improvement of DC as well as analog/RF device performance standards due to enhanced …

This article proposes and investigates a cavity on source dual-material split gate
GaAs/InAs/Ge Junctionless tunnel field-effect transistor (CS-DMSG-GaAs/InAs/Ge-JLTFET) …

In this paper, we propose a novel germanium source based dual metal gate tunneling field
effect transistor (VGeDMG). Design of device effectively suppresses lateral tunneling current …

This work analyses the reliability issues of vertically extended drain double gate Si 1− x Ge x
source tunnel FET on the basis of temperature effect and interface charge effects. The …

The variation of the temperature-dependent performance of an electronic device is one of
the major concerns in predicting the actual electrical characteristics of the device as the …

The present paper proposes a dielectric modulation based Triple Gate Doping Less Tunnel
Field Effect Transistor (TG-DLTFET) biosensor with a cavity introduced underneath the gate …