Advances in ZnO: Manipulation of defects for enhancing their technological potentials

I Ayoub, V Kumar, R Abolhassani, R Sehgal… - Nanotechnology …, 2022 - degruyter.com
This review attempts to compile the physics and chemistry of defects in zinc oxide (ZnO), at
both, the fundamental and application levels. The defects, either inherent ones or introduced …

Atomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation

I Yonenaga - Semiconductor Science and Technology, 2020 - iopscience.iop.org
The current understanding of various dislocation phenomena, including nucleation, core
structures, kink properties, impurity effects, and point defect formation and absorption in …

[HTML][HTML] Noticeable influence of V-dopant on optoelectronic properties of ZnO films prepared by SILAR technique

M Shkir, MT Khan, A Khan, FH Alkallas, ABG Trabelsi… - Results in Physics, 2024 - Elsevier
Wide bandgap semiconductors such as Zinc Oxide (ZnO) have earned much attention on
account of its interesting optical and electrical properties. Also, doping ZnO with suitable …

Enhanced boundary-scattering of electrons and phonons in nanograined zinc oxide

Y Kinemuchi, H Nakano, M Mikami… - Journal of Applied …, 2010 - pubs.aip.org
Nanoscale constituents in bulk materials can promote enhanced boundary-scattering in the
transport of phonons as well as electrons, which is considered a key design factor for …

Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires

S Mueller, M Zhou, Q Li, C Ronning - Nanotechnology, 2009 - iopscience.iop.org
Zinc oxide nanowires were grown by vapor transport using the vapor–liquid–solid growth
mechanism. The zinc oxide nanowires were implanted with transition metals (Co, Fe or Ni) …

Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures

Y Ohno, H Koizumi, T Taishi, I Yonenaga… - Journal of Applied …, 2008 - pubs.aip.org
Optical properties of wurtzite ZnO bulk single crystals in which an arbitrary number (typically
10 9–10 10 cm− 2⁠) of fresh dislocations were introduced intentionally by the plastic …

The influence of annealing temperature on the slip plane activity and optical properties of nanostructured ZnO films

V Soleimanian, SR Aghdaee - Applied surface science, 2011 - Elsevier
The zinc oxide films were prepared by the sol–gel method on the ordinary glass substrates.
The activity of slip systems were evaluated by X-ray diffraction line broadening analysis …

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

I Yonenaga, Y Ohno, T Taishi, Y Tokumoto - Physica B: Condensed Matter, 2009 - Elsevier
The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC,
AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by …

In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

Y Ohno, T Taishi, I Yonenaga - physica status solidi (a), 2009 - Wiley Online Library
Extended defects acting as non‐radiative recombination center or those acting as radiative
one were, respectively, studied by transmission electron microscopy under the illumination …

A multifunctional MEMS pressure and temperature sensor for harsh environment applications

A Najafi Sohi - 2013 - uwspace.uwaterloo.ca
The objective of this thesis was to develop a fast-response multifunctional MEMS (Micro
Electro Mechanical Systems) sensor for the simultaneous measurement of in-cylinder …