Barium Ferrite with High Anisotropy for Ultra‐Broadband Microwave Absorption
N Li, Z Zong, F Zhang, JF Shi, ZY Li… - Advanced Functional …, 2024 - Wiley Online Library
In the 5G era, Barium ferrite (BaFe12O19) has a pivotal position in both fundamental
research and frontier applications, such as magnetic recording, microwave absorption, and …
research and frontier applications, such as magnetic recording, microwave absorption, and …
Experimental demonstration of tunable hybrid improper ferroelectricity in double-perovskite superlattice films
Hybrid improper ferroelectricity can effectively avoid the intrinsic chemical incompatibility of
electronic mechanism for multiferroics. Perovskite superlattices, as theoretically proposed …
electronic mechanism for multiferroics. Perovskite superlattices, as theoretically proposed …
Growth of multiferroic γ-BaFe2O4 thin films by Pulsed Electron Deposition technique
Multiferroic materials have attracted significant attention due to their potential to
revolutionize logic and memory devices by reducing energy consumption or increasing …
revolutionize logic and memory devices by reducing energy consumption or increasing …
Comments on the paper “Influence of Ba-doping on the structural and physical properties of Sr2− xBaxFeVO6 double perovskites”
AA Belik - Journal of Alloys and Compounds, 2023 - Elsevier
We bring attention of the scientific community to erroneous claims about the existence of
double perovskites “Sr 2 FeVO 6” and “Ba 2 FeVO 6” and their solid solutions in the …
double perovskites “Sr 2 FeVO 6” and “Ba 2 FeVO 6” and their solid solutions in the …
Exploring room temperature multiferroicity in Mg0.3Co0.7Fe2O4 films
Y Han, K Shen, L Guo, K Hu, Z Sun, H Wu… - Journal of Materials …, 2023 - Springer
Multiferroic materials with sizeable magnetization and electric polarization simultaneously at
room temperature hold the promise for the realization of low-dissipation multifunctional …
room temperature hold the promise for the realization of low-dissipation multifunctional …
Domain-modified engineering for low-power resistive switching in ferroelectric diodes
J Niu, Y Jiang, X Shi, D Xue, B Yang, S Zhao - Applied Physics Letters, 2024 - pubs.aip.org
Neuromorphic devices based on ferroelectric resistive switching (RS) effects are promising
to simulate the information recognition and memory of the human brain. However, the high …
to simulate the information recognition and memory of the human brain. However, the high …