An improved, physics-based analytical model for simulating the performance of SiC
MESFETs has been developed for use in device design for high frequency, high power …

This paper presents a detailed mathematical model describing the IV IV characteristics of
submicron SiC MESFETs. Poisson's equation with appropriate boundary conditions has …

We present the first physics-based nonstationary modeling of a submicron GaN permeable
base transistor. Three different transport models are compared: drift-diffusion, energy …

Analytical model for buried p-layer 4H-SiC MESFET in saturation region is proposed. This
model provides static characteristics and small signal parameter and has been extended to …

Silicon carbide vertical MESFET devices are well suited for high speed and high power
electronic devices. In this work we have optimized the geometry of vertical MESFETs for …

The importance of simulation is increasing in the research on semiconductor devices and
materials. Simulations are used to explore the characteristics of novel devices as well as …

Abstract The GEMS (General Monte Carlo Semiconductor) simulator is a full band ensemble
program developed at Mid-Sweden University. A principal objective of the project is to create …

High lattice temperature effects on the electron transport transient in the 4 H‐Si C c-parallel
direction are studied within a single equivalent isotropic valley picture in the momentum and …

Many fundamental physical properties of semiconductors are governed by the structure of
the energy bands. Electrons in the conduction band (CB) or holes in the valence band (VB) …

Abstract gaas mesfet gallium arsenide metal semiconductor field effect transistor play an
important role in high speed electronic circuits because of their higher velocity and mobility …