Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …

From observations of self-assembly of Ge quantum dots directed by substrate morphology,
we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated …

Subcells includes an epitaxially grown self-assembled quan tum dot material. The subcells
are electrically connected via tunnel junctions. Each of the subcells has an effective band …

The electronic structure of vertically stacked self-assembled quantum disks is studied within
the effective mass approximation. The energy spectrum is calculated in the adiabatic …

The photoluminescence (PL) spectra of a single-layer and a multilayer sample of self-
assembled InAs/GaAs quantum dots (QD's) intermixed by thermal annealing at various …

The linear-polarization character of photoluminescence (PL) from the cleaved edge surface
of columnar InAs/GaAs self-assembled quantum dots (QDs) has been investigated. The …

We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …

Quantum dot (QD) structure has potential applications in modern highly efficient
optoelectronic devices due to their band-tuning. The device dimensions have been …