Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam
epitaxy, having different grain sizes and grown on different substrates. Major and minor …

We have determined the schematic phase diagram in detail with high reliability for Fe
silicides grown by solid phase epitaxy (SPE) on a Si (111) 7× 7 surface at wide Fe coverage …

The growth and magnetic properties of thin Fe films deposited at room temperature on
ultrathin iron silicide seed layer epitaxially grown on Si (111) single crystal were investigated …

Metal‐semiconductor contacts are essentially of two kinds: ohmic contacts and Schottky
barriers. The physics governing the formation of metalsemiconductor Schottky barriers …

High-resolution photoelectron spectroscopy with synchrotron radiation and magnetic linear
dichroism in Fe 3 p core-level photoemission has been used to study both the initial stages …

We review the topic of scanning tunnelling microscopy (STM) studies of silicides, with an
emphasis on fundamental scientific issues that can be addressed using STM and ballistic …

The relation between magnetic properties and microscopic structure for a
metal/semiconductor system is described. Cobalt films on a CoSi interface possess an in …

Exploring the properties of magnetic metal on the semiconductor surface is of great
significance for the application of magnetic recording materials. Herein, DFT calculations are …

Low temperature (LT: 100 K) deposition of Fe on Si (111) 7× 7 surface effectively reduces Fe-
silicide formation at the Fe/Si interface, as compared with conventional room temperature …

Identically sized Au clusters are grown on the Si (111)-(7× 7) surface by room temperature
deposition of Au atoms and subsequent annealing at low-temperature. The topographical …