Volatile and nonvolatile memristive devices for neuromorphic computing
Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …
endow memristors with a physically tunable conductance to resemble synapses, neurons …
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
Evolution between CRS and NRS behaviors in MnO2@ TiO2 nanocomposite based memristor for multi-factors-regulated memory applications
Capacitive-coupled memristive effect provides a favorable way for developing novel
multifunctional device since it simultaneously exhibits capacitive behavior and resistive …
multifunctional device since it simultaneously exhibits capacitive behavior and resistive …
2D-material-based volatile and nonvolatile memristive devices for neuromorphic computing
Neuromorphic computing can process large amounts of information in parallel and provides
a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural …
a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural …
Multiphotoconductance levels of the organic semiconductor of polyimide-based memristor induced by interface charges
W Wang, G Zhou, Y Wang, B Yan, B Sun… - The Journal of …, 2022 - ACS Publications
A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to
investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI …
investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI …
Investigation of multi-photoconductance state induced by light-sensitive defect in TiOx-based memristor
B Yan, D Kuang, W Wang, Y Wang, B Sun… - Applied Physics …, 2022 - pubs.aip.org
A TiO x switching layer with a thickness of∼ 83 nm is prepared on a F-doped SnO 2 (FTO)
substrate by the sol-gel method to fabricate the Ag/TiO x/FTO memristor. The resistive …
substrate by the sol-gel method to fabricate the Ag/TiO x/FTO memristor. The resistive …
Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory
Memristor-based Pavlov associative memory circuit presented today only realizes the simple
condition reflex process. The secondary condition reflex endows the simple condition reflex …
condition reflex process. The secondary condition reflex endows the simple condition reflex …
Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level
A Fe 2 O 3 film homojunction was orderly prepared by magnetron sputtering and a
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …
Real-time acid rain sensor based on a triboelectric nanogenerator made of a PTFE–PDMS composite film
H Liu, J Dong, H Zhou, X Yang, C Xu… - ACS Applied …, 2021 - ACS Publications
Self-powered sensors based on triboelectric nanogenerators (TENGs) are increasingly used
in real-life applications, especially for monitoring water pollution, rain pH, and the like. Here …
in real-life applications, especially for monitoring water pollution, rain pH, and the like. Here …
Low-Temperature Co-hydroxylated Cu/SiO2 Hybrid Bonding Strategy for a Memory-Centric Chip Architecture
Cu/SiO2 hybrid bonding with planarized dielectric and isolated metal connections can
realize ultradense interconnects (eg,≤ 1 μm) by eliminating the microbumps and underfill …
realize ultradense interconnects (eg,≤ 1 μm) by eliminating the microbumps and underfill …