The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Emerging flexible artificial sensory systems using neuromorphic electronics have been
considered as a promising solution for processing massive data with low power …

Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Flexible electronics incorporate all the functional attributes of conventional rigid electronics
in formats that have been altered to survive mechanical deformations. Understanding the …

Flexible non‐volatile memories have attracted tremendous attentions for data storage for
future electronics application. From device perspective, the advantages of flexible memory …

Energy storage devices constitute one of the research areas in recent years. Capacitors are
commonly used for the storage of electrical energy. The current research is focusing on not …

In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

In recent years, organic resistive memory devices in which active organic materials possess
at least two stable resistance states have been extensively investigated for their promising …

In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …