This paper reviews the recent experimental findings on the atomic structures on the (001)
surface of GaAs. We systematically studied the structure and composition of the GaAs (001) …

While the (001) oriented substrate of compound semiconductors are most commonly used in
fabrication of wireless and opto-electronic devices by molecular beam epitaxy, metallorganic …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Using density-functional theory we identify a new low-energy structure for GaAs (001) in an
As-poor environment. The discovered geometry is qualitatively different from the usual …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

There has been renewed interest in the structure of III-V compound semiconductor (001)
surfaces caused by recent experimental and theoretical findings, which indicate that …

In situ scanning tunnelling microscopy and reflection high energy electron diffraction have
been used to study InAs GaAs interfaces grown on (001) surfaces by molecular beam …

We study the energetics of island formation in Stranski-Krastanow growth within a parameter-
free approach. It is shown that an optimum island size exists for a given coverage and island …

The formation of dislocation-free three-dimensional islands by heteroepitaxial growth of
lattice mismatched materials is utilized to produce partially ordered arrays of quantum dots …

A comparison is made between the electronic structures determined in ultrahigh vacuum of
three surfaces using scanning tunneling spectroscopy (STS) and Kelvin probe force …