This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

CH 3NH 3PbI 3 due to the build-up of space charges close to the contacts originating from
ionic displacement.[12, 13] Xiao et al.[12] showed that photocurrent direction in CH 3NH …

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and
their reduction/oxidation processes in the switching operation to form/annihilate a …

The microstructure (composition, nonstoichiometry, size and shape of particles) of
nanostructured semiconductor silver sulfide (Ag2S) determines its electronic structure …

We report detailed current–voltage and current–time measurements to reveal the forming
and switching behaviors of Cu/Ta 2 O 5/Pt nonvolatile resistive memory devices. The …

Resistive switching memories based on the formation and dissolution of a metal filament in a
simple metal/oxide/metal structure are attractive because of their potential high scalability …

The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte
nonvolatile memories have been attributed to repetitive formation and breakage of the …

A potential replacement for current charge-based memory technologies in the nanoscale
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …

We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …