Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
Review on R&D task integrated management of intelligent manufacturing equipment
T Ren, T Luo, S Li, L Xing, S Xiang - Neural Computing and Applications, 2022 - Springer
With the rapid development of various types of industrial big data technologies, in the
context of industrial big data and systems science, intelligent optimization algorithms and …
context of industrial big data and systems science, intelligent optimization algorithms and …
Recovery investigation of NBTI-induced traps in n-MOSFET devices
Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-
type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to …
type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to …
As-grown-generation model for positive bias temperature instability
Positive bias temperature instability (PBTI) is poised to cause significant degradation to
nFETs with deep scaling into nanometers. It is commonly modeled by a power law fitted with …
nFETs with deep scaling into nanometers. It is commonly modeled by a power law fitted with …
NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …
observed and known to play an important role in device's lifetime. However, its …
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
Silicon and the wide bandgap semiconductors, shaping the future power electronic device market
P Gammon - 2013 14th International Conference on Ultimate …, 2013 - ieeexplore.ieee.org
In this paper, the current state of the power electronic device market is reviewed in light of
the increased challenge upon Si from the wide bandgap semiconductors SiC and GaN. It is …
the increased challenge upon Si from the wide bandgap semiconductors SiC and GaN. It is …
Investigation of negative bias temperature instability effect in partially depleted SOI pMOSFET
C Peng, Z Lei, R Gao, Z Zhang, Y Chen, Y En… - IEEE …, 2020 - ieeexplore.ieee.org
The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O)
devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are …
devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are …
Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs
A Benabdelmoumene, B Djezzar… - … on Device and …, 2018 - ieeexplore.ieee.org
This paper presents a new attempt to further understand negative bias temperature
instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally …
instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally …
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
In this letter, we present an experimental study on the frequency (f) dependence of trap
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …