Impact of process variability in vertically stacked junctionless nanosheet FET
O Li, C Li, Y Wang, S Cheng, H You - Silicon, 2023 - Springer
Abstract Vertically stacked Nanosheet Field Effect Transistor (NSFET) is considered the most
promising substitution for FinFET. In order to prevent making metallurgical junctions, based …
promising substitution for FinFET. In order to prevent making metallurgical junctions, based …
A novel design of low power & high speed FinFET based binary and ternary SRAM and 4* 4 SRAM array
N Shylashree, MS Amulya, GR Disha… - IETE Journal of …, 2023 - Taylor & Francis
The Conventional Complementary Metal Oxide Semiconductor Field Effect Transistor
(CMOSFET) design techniques have limitations in designing the Integrated Circuit (ICs) …
(CMOSFET) design techniques have limitations in designing the Integrated Circuit (ICs) …
[图书][B] Fabless Semiconductor Manufacturing: In the Era of Internet of Things
CK Maiti - 2022 - api.taylorfrancis.com
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm
and smaller technology nodes. It discusses technology computer-aided design (TCAD) …
and smaller technology nodes. It discusses technology computer-aided design (TCAD) …
Nanowire transistors
S Dey - Fabless Semiconductor Manufacturing, 2022 - taylorfrancis.com
Owing to the demands generated by the internet of things applications on having low power
and low leakage devices, nanowire devices are becoming very important. The field-effect …
and low leakage devices, nanowire devices are becoming very important. The field-effect …
Stress Enhanced Performance Analysis for Trigate FinFETs at 7nm Node
Short channel effect becomes a serious concern below 22nm technology node. This can be
overcome by multigate devices such as double gate (DG), trigate (TG). Trigate FinFET …
overcome by multigate devices such as double gate (DG), trigate (TG). Trigate FinFET …
Modeling and Performance Analysis of n-FinFETs: A Comparative Study
A comparative analysis of full electrostatic performance and RF characteristics of n-type
FinFETs is carried out by using the different physical models. Quantum confinement effects …
FinFETs is carried out by using the different physical models. Quantum confinement effects …