Hexagonal boron nitride for next‐generation photonics and electronics

S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

Materials for interconnects

D Gall, JJ Cha, Z Chen, HJ Han, C Hinkle, JA Robinson… - MRS Bulletin, 2021 - Springer
The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

[HTML][HTML] The search for the most conductive metal for narrow interconnect lines

D Gall - Journal of Applied Physics, 2020 - pubs.aip.org
A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim… - Acs Nano, 2017 - ACS Publications
Understanding the structural stability of transition-metal dichalcogenides is necessary to
avoid surface/interface degradation. In this work, the structural stability of 2H-MoTe2 with …

Recent advances in barrier layer of Cu interconnects

Z Li, Y Tian, C Teng, H Cao - Materials, 2020 - mdpi.com
The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric
layer at high temperatures; therefore, it must have a high stability and good adhesion to both …

[HTML][HTML] Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling

CL Lo, BA Helfrecht, Y He, DM Guzman… - Journal of Applied …, 2020 - pubs.aip.org
As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …

Direct growth of graphene on rigid and flexible substrates: Progress, applications, and challenges

VP Pham, HS Jang, D Whang, JY Choi - Chemical Society Reviews, 2017 - pubs.rsc.org
Graphene has recently been attracting considerable interest because of its exceptional
conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit …

Materials quest for advanced interconnect metallization in integrated circuits

JH Moon, E Jeong, S Kim, T Kim, E Oh, K Lee… - Advanced …, 2023 - Wiley Online Library
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

MoS2 as an Effective Cu Diffusion Barrier with a Back-End Compatible Process

CY Kuo, YT Chang, YT Huang, IC Ni… - … Applied Materials & …, 2023 - ACS Publications
This study demonstrates molybdenum disulfide (MoS2) as a superior candidate as a
diffusion barrier and liner. This research explores a newly developed process to show how …

Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology

CL Lo, M Catalano, KKH Smithe, L Wang… - npj 2D Materials and …, 2017 - nature.com
Copper interconnects in modern integrated circuits require a barrier layer to prevent Cu
diffusion into surrounding dielectrics. However, conventional barrier materials like TaN are …