Hexagonal boron nitride for next‐generation photonics and electronics
S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …
tremendous interest motivated by the extraordinary properties it shows across the fields of …
Materials for interconnects
The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …
signal delay and energy consumption that limits further downscaling of integrated circuits …
[HTML][HTML] The search for the most conductive metal for narrow interconnect lines
D Gall - Journal of Applied Physics, 2020 - pubs.aip.org
A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing
Understanding the structural stability of transition-metal dichalcogenides is necessary to
avoid surface/interface degradation. In this work, the structural stability of 2H-MoTe2 with …
avoid surface/interface degradation. In this work, the structural stability of 2H-MoTe2 with …
Recent advances in barrier layer of Cu interconnects
Z Li, Y Tian, C Teng, H Cao - Materials, 2020 - mdpi.com
The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric
layer at high temperatures; therefore, it must have a high stability and good adhesion to both …
layer at high temperatures; therefore, it must have a high stability and good adhesion to both …
[HTML][HTML] Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling
As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …
generation, there is an urgent need to find viable solutions for both the front-end-of-line …
Direct growth of graphene on rigid and flexible substrates: Progress, applications, and challenges
Graphene has recently been attracting considerable interest because of its exceptional
conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit …
conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit …
Materials quest for advanced interconnect metallization in integrated circuits
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …
improvements while increasing the cost and complexity of the technology with each …
MoS2 as an Effective Cu Diffusion Barrier with a Back-End Compatible Process
CY Kuo, YT Chang, YT Huang, IC Ni… - … Applied Materials & …, 2023 - ACS Publications
This study demonstrates molybdenum disulfide (MoS2) as a superior candidate as a
diffusion barrier and liner. This research explores a newly developed process to show how …
diffusion barrier and liner. This research explores a newly developed process to show how …
Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology
CL Lo, M Catalano, KKH Smithe, L Wang… - npj 2D Materials and …, 2017 - nature.com
Copper interconnects in modern integrated circuits require a barrier layer to prevent Cu
diffusion into surrounding dielectrics. However, conventional barrier materials like TaN are …
diffusion into surrounding dielectrics. However, conventional barrier materials like TaN are …