In high-power converter design, insulated gate bipolar transistor (IGBT) modules are often
operated in parallel to reach high output currents. Evaluating the electrical and thermal …

In this paper the behavior analysis of parallel connection of IGBTs under short circuit
conditions is presented. The issues of hard switching fault (HSF) and fault under load (FUL) …

RUB-Repository - Switching IGBTs in parallel connection or with enlarged commutation
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The paper deals with the experimental evaluation of the electrical and thermal behaviors of
punch-through IGBT in parallel connections. The influences of the electrical parameters on …

This paper presents the problems associated with the parallel connection of punch through
IGBTs, such as: thermal stability and current balance. An experimental investigation is …

Measurements prove an impact of the IGBT anode current on the gate voltage. This is of
interest for gate-drive considerations aiming at the control of current and voltage waveforms …