During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

To address the fabrication complexity and cost of nanoscale devices, a dual material control
gate charge-plasma-based tunnel FET (DMCG-CPTFET) is presented for the first time for the …

This brief models the effect of lightly doped drain on the I ds-V gs and I ds-V ds
characteristics of tunnel FETs. It is shown that an extended drain depletion region can …

A compact analytical drain current model considering the inversion layer and source
depletion is developed for the gate-all-around (GAA) heterojunction tunneling FET (H-TFET) …

Based on an analytical surface potential and a simple mathematical approximation for the
source depletion width, a physics-based capacitance model with closed form for silicon …

In this article, we present a compact analytical model for the drain current of the nanowire
heterojunction tunneling field-effect transistor (FET). The model is developed by leveraging …

In this article, a three-dimensional model of Tri-gate Tunnel Filed effect transistors (TFET)
with different gate materials is proposed. Analysis and comparison of various structures such …

An analytical model is developed for the fluctuation of the electrostatic potential induced by a
charged trap in the gate oxide in tunneling field effect transistor (TFET). The model is applied …

Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling:
1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope …

The goal of this work is to study the performance of current mirror circuits designed with line
tunnel field effect transistor (TFET) devices and compare the suitability of this technology …