Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement
K Mizutani, T Hoshii, H Wakabayashi… - Japanese Journal of …, 2022 - iopscience.iop.org
The effects of 1 nm thick CeO x capping on 7.5 nm thick Y-doped HfO 2 films on the
ferroelectric characteristics are investigated. From the ferroelectric characteristics of the …
ferroelectric characteristics are investigated. From the ferroelectric characteristics of the …
HfO2: Y2O3 ultrathin nanolaminate structures grown by ALD: Bilayer thickness and annealing temperature effects on optical properties
Ultrathin nanolaminate structures were prepared by sequential HfO 2: Y 2 O 3 (HY) bilayer
deposition at 250° C on n-type (100) silicon wafers via thermal atomic layer deposition …
deposition at 250° C on n-type (100) silicon wafers via thermal atomic layer deposition …
Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination
K Mizutani, T Hoshii, H Wakabayashi… - Applied Physics …, 2022 - iopscience.iop.org
Process robustness of ferroelectric HfO 2 films formed by dopant-laminated structure is
investigated. Ferroelectric hysteresis obtained by the sub-monolayer Y 2 O 3 laminated …
investigated. Ferroelectric hysteresis obtained by the sub-monolayer Y 2 O 3 laminated …
High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer
J Song, A Ohta, T Hoshii, H Wakabayashi… - Japanese Journal of …, 2021 - iopscience.iop.org
Enhanced oxidation of the 4H-SiC surface in an oxygen-lean environment by a thin CeO x
layer was confirmed. By capping with a 40 nm thick SiO 2 layer on a 1 nm thick CeO x layer …
layer was confirmed. By capping with a 40 nm thick SiO 2 layer on a 1 nm thick CeO x layer …