Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
TaO x -based resistive switching memories: prospective and challenges
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash
in the future. Although different switching materials have been reported; however, low …
in the future. Although different switching materials have been reported; however, low …
RRAM characteristics using a new Cr/GdOx/TiN structure
Resistive random access memory (RRAM) characteristics using a new Cr/GdO x/TiN
structure with different device sizes ranging from 0.4× 0.4 to 8× 8 μm 2 have been reported …
structure with different device sizes ranging from 0.4× 0.4 to 8× 8 μm 2 have been reported …
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
SZ Rahaman, S Maikap, TC Tien, HY Lee… - Nanoscale research …, 2012 - Springer
Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaO
x/W structure with a Ti nanolayer at the Cu/TaO x interface under low voltage operation …
x/W structure with a Ti nanolayer at the Cu/TaO x interface under low voltage operation …
Atomic Layer Deposition of W:Al2O3 Nanocomposite Films with Tunable Resistivity
Nanocomposite tungsten‐aluminum oxide (W: Al2O3) thin films were prepared by atomic
layer deposition (ALD) using tungsten hexafluoride (WF6) and disilane (Si2H6) for the W …
layer deposition (ALD) using tungsten hexafluoride (WF6) and disilane (Si2H6) for the W …
Coexistence of memristive and memcapacitive effects in oxide thin films
Y Shuai, Y Peng, X Pan, L Jin, C Wu… - Japanese Journal of …, 2018 - iopscience.iop.org
Polycrystalline bismuth ferrite (BiFeO 3, BFO) thin films are fabricated by pulsed laser
deposition technique on Pt/Ti/SiO 2/Si substrates, the current–voltage (I–V) and capacitance …
deposition technique on Pt/Ti/SiO 2/Si substrates, the current–voltage (I–V) and capacitance …
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching …
Improved switching characteristics were obtained from high-κ oxides AlO x, GdO x, HfO x,
and TaO x in IrO x/high-κ x/W structures because of a layer that formed at the IrO x/high-κ x …
and TaO x in IrO x/high-κ x/W structures because of a layer that formed at the IrO x/high-κ x …
Graphene-oxide-based resistive switching device for flexible nonvolatile memory application
CC Lin, HY Wu, NC Lin, CH Lin - Japanese Journal of Applied …, 2014 - iopscience.iop.org
Resistive switching memory, flexible electronics equipment, and graphene-oxide-based
devices have attracted much attention recently because of their possible application in next …
devices have attracted much attention recently because of their possible application in next …
Correlation between diode polarization and resistive switching polarity in Pt/TiO2/Pt memristive device
We have investigated the correlation between diode polarization and switching polarity in
electroformed Pt/TiO2/Pt memristive device. Before forming, the diode direction of the …
electroformed Pt/TiO2/Pt memristive device. Before forming, the diode direction of the …
The improved resistive switching properties of TaOx-based RRAM devices by using WNx as bottom electrode
Q Zhou, J Zhai - Physica B: Condensed Matter, 2013 - Elsevier
The WNx films were successfully prepared on silicon-based substrates as bottom electrodes
for the resistive random access memory (RRAM) cells in Pt (top)/TaOx/WNx (bottom) …
for the resistive random access memory (RRAM) cells in Pt (top)/TaOx/WNx (bottom) …