The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

This paper summarizes some of the essential aspects of silicon‐nanowire growth and of
their electrical properties. In the first part, a brief description of the different growth …

In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed
and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect …

Research on silicon nanowires has developed rapidly in recent years. This can best be
inferred from the sharply increasing number of publications in this field. In 2008, more than …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

This paper discusses the electronic transport properties of nanowire field-effect transistors
(NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs …

Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power and low-
cost sensors are highly desirable. Here, we present a novel biosensor based on a …

A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity doping. In this review article, we discuss the key results in the field of semiconductor …

InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and
characterized by electrical measurements and transmission electron microscopy. Down …