Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO)
channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) …

Amorphous indium–gallium–zinc oxide (a-IGZO) has become a standard channel ingredient
of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) …

Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of
metal elements and oxygen elements, possessing distinctive electrical properties. Even in …

Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by
atomic layer deposition were investigated with controlling the cationic compositions and …

Metal-oxide semiconductors are considered promising alternative materials in the field of flat
panel display industry due to their advantages, such as high mobility, transparency …

In this study, thin film transistors (TFTs) based on metal oxide with a regulated channel
prepared by solution process were fabricated. The front channel was composed of indium …

We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor
for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co …

Amorphous indium–gallium–zinc oxide (IGZO)‐based optical synaptic transistor using
visible light as the signal that shows a clear difference between long‐term memory (LTM) …

Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly
utilized in displays. However, to bring high mobility and excellent stability together is a …

We propose that the post-deposition oxidation of the IGZO surface is essential for improving
the interface quality, with Al2O3 prepared by atomic layer deposition (ALD) employing a …