200 cm2/Vs electron mobility and controlled low 1015 cm− 3 Si doping in (010) β-Ga2O3 epitaxial drift layers
C Peterson, A Bhattacharyya… - Applied Physics …, 2024 - pubs.aip.org
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …
[HTML][HTML] Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation
A systematic investigation of the electrical characteristics of β-Ga 2 O 3 Schottky barrier
diodes (SBDs) has been conducted under high-dose 60 Co gamma radiation, with total …
diodes (SBDs) has been conducted under high-dose 60 Co gamma radiation, with total …
Record-High Electron Mobility and Controlled Low 10 cm Si-doping in (010) -GaO Epitaxial Drift Layers
C Peterson, A Bhattacharyya… - arXiv preprint arXiv …, 2024 - arxiv.org
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-
doped 4.5$\mu $ m thick $\beta $-Ga $ _2 $ O $ _3 $ films with electron concentrations in …
doped 4.5$\mu $ m thick $\beta $-Ga $ _2 $ O $ _3 $ films with electron concentrations in …
LPCVD Grown Si-Doped -GaO Films with Promising Electron Mobilities
SA Khan, A Ibreljic, S Margiotta… - arXiv preprint arXiv …, 2024 - arxiv.org
We systematically investigated the growth of Si-doped $\beta $-Ga $ _2 $ O $ _3 $ films
using LPCVD system, achieving high electron mobilities of 162 cm $^ 2$/Vs and 149 cm …
using LPCVD system, achieving high electron mobilities of 162 cm $^ 2$/Vs and 149 cm …