RF acoustic microsystems based on suspended lithium niobate thin films: Advances and outlook
This paper presents a review of the radio frequency thin-film lithium niobate (LiNbO 3) based
acoustic microsystems. Thanks to their high electromechanical coupling (k 2), low loss, and …
acoustic microsystems. Thanks to their high electromechanical coupling (k 2), low loss, and …
Investigation of 20% scandium-doped aluminum nitride films for MEMS laterally vibrating resonators
This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped
Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators …
Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators …
High-figure-of-merit X-cut lithium niobate MEMS resonators operating around 50 MHz for large passive voltage amplification in radio frequency applications
This article reports on the modeling, design, fabrication, and testing of high-performance X-
cut lithium niobate (LN) laterally vibrating resonators (LVRs) operating around 50 MHz. The …
cut lithium niobate (LN) laterally vibrating resonators (LVRs) operating around 50 MHz. The …
Resonant microelectromechanical receiver
This paper reports a practical demonstration of a proposed resonant
microelectromechanical receiver for low power wake-up receiver (WuRx) applications. The …
microelectromechanical receiver for low power wake-up receiver (WuRx) applications. The …
Near spurious-free thickness shear mode lithium niobate resonator for piezoelectric power conversion
Piezoelectric power converters, where acoustic resonators replace the inductors as energy
storage elements, promise much higher power density and higher efficiency compared to …
storage elements, promise much higher power density and higher efficiency compared to …
55.4 GHz Bulk Acoustic Resonator in Thin-Film Scandium Aluminum Nitride
This study describes a sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic
resonator (FBAR) at 55.4 GHz. The resonator leverages the third-order symmetric (S3) mode …
resonator (FBAR) at 55.4 GHz. The resonator leverages the third-order symmetric (S3) mode …
Investigation of electromechanical coupling and quality factor of X-cut lithium niobate laterally vibrating resonators operating around 400 MHz
In this paper we present laterally vibrating resonators (LVRs) based on X-cut lithium niobate
(LN) exhibiting a maximum quality factor (Q) around 1200 and an electromechanical …
(LN) exhibiting a maximum quality factor (Q) around 1200 and an electromechanical …
A unidirectional transducer design for scaling GHz AlN-based RF microsystems
In this work, we present a novel unidirectional transducer design for frequency scaling
aluminum nitride (AlN)-based radio frequency (RF) microsystems. The proposed thickness …
aluminum nitride (AlN)-based radio frequency (RF) microsystems. The proposed thickness …
Comparison between different MEMS laterally vibrating resonator technologies for passive voltage amplification in an RF front-end system
This paper describes the challenges associated with attaining passive voltage gain by
means of piezoelectric MEMS Laterally Vibrating Resonators (LVRs) in an RF frontend …
means of piezoelectric MEMS Laterally Vibrating Resonators (LVRs) in an RF frontend …
Top electrode shaping for harnessing high coupling in thickness shear mode resonators in Y-cut lithium niobate thin films
A Kochhar, G Vidal-Alvarez… - 2018 IEEE Micro …, 2018 - ieeexplore.ieee.org
This paper reports a novel electrode shape for harnessing the high electromechanical
coupling of the thickness shear mode (TSM) in Y-cut lithium niobate (LN) thin film …
coupling of the thickness shear mode (TSM) in Y-cut lithium niobate (LN) thin film …