Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide …
In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-
conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface …
conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface …
A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping …
S Demirezen, S Altındal Yerişkin - Polymer Bulletin, 2020 - Springer
In this study, three different poly (vinyl alcohol)(PVA) films doped with weight percentages of
0.05, 0.10 and 0.20 coumarin were coated on p-Si wafer via spin-coating method for the …
0.05, 0.10 and 0.20 coumarin were coated on p-Si wafer via spin-coating method for the …
[HTML][HTML] Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl …
Abstract Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure
and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic …
and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic …
A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room …
Ş Altındal, Ö Sevgili, Y Azizian-Kalandaragh - Journal of Materials Science …, 2019 - Springer
Abstracts In this study, the Au/n-Si structures with and without (CoSO 4–PVP) organic
interlayer were fabricated on the same n-Si wafer and electrical characteristics of them were …
interlayer were fabricated on the same n-Si wafer and electrical characteristics of them were …
The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements
T Ganj, SM Rozati, Y Azizian-Kalandaragh… - Journal of Materials …, 2023 - Springer
In this paper, the cerium-oxide nanostructures (CeO2) were synthesized by using the
hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2: PVC)-Si …
hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2: PVC)-Si …
Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer
İ Taşçıoğlu, Ö Sevgili, Y Azizian-Kalandaragh… - Journal of Electronic …, 2020 - Springer
A film of cobalt sulfate (CoSO 4)-doped polyvinylpyrrolidone (PVP) blend was spin-coated
on n-Si. Electrical measurements were conducted on the Au/n-Si structure with the CoSO 4 …
on n-Si. Electrical measurements were conducted on the Au/n-Si structure with the CoSO 4 …
The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors
In this research, PVA (doped with 7% Zn) was sandwiched between Al and p-Si as a
polymer interfacial layer. Voltage and frequency effect on the real and imaginary …
polymer interfacial layer. Voltage and frequency effect on the real and imaginary …
Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer
Electrical and dielectric properties of Au/n-Si metal-semiconductor structures with high
dielectric have been examined by capacitance/conductance-voltage (C/GV) measurements …
dielectric have been examined by capacitance/conductance-voltage (C/GV) measurements …
Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison
Abstract Au/n-Si (MS) and Au/(SnO 2-PVA)/n-Si (MPS) type SDs were manufactured at
identical conditions for investigation of the (SnO 2-PVA) organic/polymer interlayer effects on …
identical conditions for investigation of the (SnO 2-PVA) organic/polymer interlayer effects on …
Impact of CuO nanofiller on structural, optical and dielectric properties of CuO/DGEBA hybrid nanocomposites for optoelectronic devices
W Jilani, A Jlali, H Guermazi - Optical and Quantum Electronics, 2021 - Springer
In this work, Copper oxide nanofiller with different contents (0.05, 0.5, 1, and 2 wt% CuO)
were embedded in DGEBA epoxy matrix using ultrasonic wave and casting processing …
were embedded in DGEBA epoxy matrix using ultrasonic wave and casting processing …