Dynamically corrected gates from geometric space curves

E Barnes, FA Calderon-Vargas, W Dong… - Quantum Science …, 2022 - iopscience.iop.org
Quantum information technologies demand highly accurate control over quantum systems.
Achieving this requires control techniques that perform well despite the presence of …

Electric field control of spins in molecular magnets

J Liu, J Mrozek, WK Myers, GA Timco, REP Winpenny… - Physical review …, 2019 - APS
Coherent control of individual molecular spins in nanodevices is a pivotal prerequisite for
fulfilling the potential promised by molecular spintronics. By applying electric field pulses …

All-electric control of donor nuclear spin qubits in silicon

AJ Sigillito, AM Tyryshkin, T Schenkel, AA Houck… - Nature …, 2017 - nature.com
The electronic and nuclear spin degrees of freedom of donor impurities in silicon form ultra-
coherent two-level systems, that are potentially useful for applications in quantum …

First Demonstration of Magnetoelectric Coupling in a Polynuclear Molecular Nanomagnet: Single‐Crystal EPR Studies of [Fe3O(O2CPh)6(py)3]ClO4⋅py under …

AK Boudalis, J Robert, P Turek - Chemistry–A European …, 2018 - Wiley Online Library
Single‐crystal EPR experiments show that the highly symmetric antiferromagnetic half‐
integer spin triangle [Fe3O (O2CPh) 6 (py) 3] ClO4⋅ py (1, py= pyridine) possesses a ST …

Addressable electron spin resonance using donors and donor molecules in silicon

SJ Hile, L Fricke, MG House, E Peretz, CY Chen… - Science …, 2018 - science.org
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum
computing due to their exceptionally long coherence times and high fidelities. However …

Large Stark tuning of donor electron spin qubits in germanium

AJ Sigillito, AM Tyryshkin, JW Beeman, EE Haller… - Physical Review B, 2016 - APS
Donor electron spins in semiconductors make exceptional qubits because of their long
coherence times and compatibility with industrial fabrication techniques. Despite many …

Quantum gates with donors in germanium

G Pica, BW Lovett - Physical Review B, 2016 - APS
Recent work has shown that electron spins in germanium (Ge) nanoscale transistors can be
electrically tuned and have encouraging coherence times. Based on a complete and …

Addressing spin transitions on donors in silicon using circularly polarized microwaves

T Yasukawa, AJ Sigillito, BC Rose, AM Tyryshkin… - Physical Review B, 2016 - APS
Over the past decade, donor spin qubits in isotopically enriched Si 28 have been intensely
studied due to their exceptionally long coherence times. More recently, bismuth donor …

Measurements and atomistic theory of electron -factor anisotropy for phosphorus donors in strained silicon

M Usman, H Huebl, AR Stegner, CD Hill, MS Brandt… - Physical Review B, 2018 - APS
This work reports the measurement of electron g-factor anisotropy (| Δ g|=| g 001− g 1 1¯ 0|)
for phosphorous donor qubits in strained silicon (sSi= Si/Si 1− x Ge x) environments …

Engineering effective Hamiltonians for magnetic resonance

H Haas - 2019 - uwspace.uwaterloo.ca
Effective Hamiltonian engineering is a powerful technique that utilises time-dependent
perturbation theory to suppress or enhance certain effects that arise from otherwise weak …