Superjunction has arguably been the most creative and important concept in the power
device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s …

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …

This article studies the underlying physical mechanism and comprehensive characteristics
of the N-channel IGBT (N-IGBT) with P-drift region (PD-IGBT). Distinguishing from the …

Compared with the discrete insulated gate bipolar transistor (IGBT), the silicon-on-insulator
lateral IGBT (SOI-LIGBT) owns the advantage of being integrated with peripheral circuits …

An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for
the first time. By adding one or several ODIs in the drift longitudinally equidistantly, the ODI …

In this paper, a novel dual-trench superjunction insulated gate bipolar transistor with semi-
floating P-pillar (DTSFP-SJ-IGBT) is proposed and studied by simulation. The P-pillar of …

High‐voltage withstand tests are essential for electric equipment like power transformers,
electric cable lines, gas insulated switchgears etc. The partial discharge (PD) measurement …

An ultralow turn-OFF loss (EOFF) silicon-oninsulator lateral insulated-gate bipolar transistor
with a p-buried layer (PB SOT LTGBT) is first proposed. A universal EOFF model during …

A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is
presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS …

A novel insulated gate bipolar transistor modulated by a high-k dielectric (HK-IGBT) is
presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and …