Optimal aluminum doping method in PEALD for designing outstandingly stable InAlZnO TFT
Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film
transistors (TFTs). The role of the cations should be considered in the design of oxide …
transistors (TFTs). The role of the cations should be considered in the design of oxide …
Comprehensive Study of Hydrogen Gas Sensing Performance of an Amorphous In-Al-Zn-O (a-IAZO) Thin Film Synthesized With Pd Nanoparticles
JS Niu, RY Peng, CC Chiu, JH Tsai… - … on Electron Devices, 2023 - ieeexplore.ieee.org
A novel hydrogen (H2) sensor produced by the combination of an amorphous indium-
aluminum-zinc-oxide (a-IAZO) thin film and palladium (Pd) nanoparticles (NPs) is …
aluminum-zinc-oxide (a-IAZO) thin film and palladium (Pd) nanoparticles (NPs) is …
P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability
J Xie, J Shi, J Dong, Z Wang, Y Cai… - … Symposium Digest of …, 2024 - Wiley Online Library
In this work, thermal stability of InZnO (IZO) and Al‐doped InZnO (IAZO) transistors are
studied. With a consecutive annealing pre‐treatment at 300℃ in air, the IAZO transistors …
studied. With a consecutive annealing pre‐treatment at 300℃ in air, the IAZO transistors …
On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT
Channel thickness is a key parameter in determining the electrical characteristics of double-
gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is …
gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is …