We describe a spin logic device with controllable magnetization switching of perpendicularly
magnetized ferromagnet/heavy metal structures on a ferroelectric (1-)[Pb (Mg 1/3 Nb 2/3) O …

Electrical current–induced deterministic magnetization switching in a magnetic multilayer
structure without any external magnetic field is realized by utilizing interlayer exchange …

Spin currents are used to write information in magnetic random access memory (MRAM)
devices by switching the magnetization direction of one of the ferromagnetic electrodes of a …

We investigated the current-induced magnetization switching in a perpendicular magnetized
Pt/CoNiCo/Pt sandwich structure by spin-orbit torques under in-plane gradient current …

We demonstrate the effect of shape deformation in spin–orbit torque magnetoresistive
random access memory (SOT-MRAM) based on micromagnetic simulation by generating …

A Multiplier is an essential component that dictates the performance of modern computing
systems. However, high power dissipation of complementary metal-oxide semiconductor …

Reducing transistor dimensions cannot sustain the growing demand for better technology.
To reduce the power consumption while increasing the technological performance we can …

We proposed a multilayer structure to reduce the critical spin current density of
perpendicularly magnetized layers switched by spin-orbit torque (SOT) from the spin Hall …

Extensive experiments have been devoted to study the deterministic switching of
perpendicularly magnetized layers in heavy metal/ferromagnet devices driven by spin orbital …