Recent progress in red light-emitting diodes by III-nitride materials
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …
same material system. These emitters are expected to be next-generation red, green, and …
Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Realization of red electroluminescence from Ga2O3: Eu/Si based light-emitting diodes
Y Huang, K Saito, T Tanaka, Q Guo - Superlattices and Microstructures, 2021 - Elsevier
Eu doped Ga 2 O 3 film has been grown on n-Si (111) substrate by pulsed laser deposition.
Excellent structural and optical properties of the obtained Ga 2 O 3: Eu film have been …
Excellent structural and optical properties of the obtained Ga 2 O 3: Eu film have been …
Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film
G Deng, Y Huang, Z Chen, C Pan, K Saito… - Journal of …, 2021 - Elsevier
Yellow color from vertically integrated light emitting device (LED) was reported. The
multilayer structured Er and Eu doped Ga 2 O 3 films were deposited on sapphire and GaAs …
multilayer structured Er and Eu doped Ga 2 O 3 films were deposited on sapphire and GaAs …
Eu luminescence center created by Mg codoping in Eu-doped GaN
We investigated the photoluminescence properties of Eu, Mg-codoped GaN grown by
organometallic vapor phase epitaxy. Some emission due to intra-4f shell transition of 5 D 0-7 …
organometallic vapor phase epitaxy. Some emission due to intra-4f shell transition of 5 D 0-7 …
Low temperature growth of europium doped Ga2O3 luminescent films
Z Chen, K Saito, T Tanaka, M Nishio, M Arita… - Journal of Crystal …, 2015 - Elsevier
Abstract Europium (Eu) doped Ga 2 O 3 films were deposited on sapphire substrates by
pulsed laser deposition (PLD) with varying Eu contents at substrate temperature as low as …
pulsed laser deposition (PLD) with varying Eu contents at substrate temperature as low as …
GaN: Eu, O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors
T Inaba, J Tatebayashi, K Shiomi… - ACS Applied …, 2020 - ACS Publications
We demonstrate a GaN: Eu, O-based resonant-cavity light emitting diode (RCLED)
fabricated with a n-type conductive Al0. 82In0. 18N/GaN bottom-distributed Bragg reflector …
fabricated with a n-type conductive Al0. 82In0. 18N/GaN bottom-distributed Bragg reflector …
Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
Y Fujiwara, V Dierolf - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
We have succeeded in growing Eu-doped GaN (GaN: Eu) layers with high crystalline quality
by organometallic vapor phase epitaxy, and have demonstrated a low-voltage current …
by organometallic vapor phase epitaxy, and have demonstrated a low-voltage current …
The role of donor-acceptor pairs in the excitation of Eu-ions in GaN: Eu epitaxial layers
The nature of Eu incorporation and resulting luminescence efficiency in GaN has been
extensively investigated. By performing a comparative study on GaN: Eu samples grown …
extensively investigated. By performing a comparative study on GaN: Eu samples grown …
Temporally modulated energy shuffling in highly interconnected nanosystems
Advances in lighting and quantum computing will require new degrees of control over the
emission of photons, where localized defects and the quantum confinement of carriers can …
emission of photons, where localized defects and the quantum confinement of carriers can …