TaO x -based resistive switching memories: prospective and challenges

A Prakash, D Jana, S Maikap - Nanoscale research letters, 2013 - Springer
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash
in the future. Although different switching materials have been reported; however, low …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Multilevel cell storage and resistance variability in resistive random access memory

A Prakash, H Hwang - Physical Sciences Reviews, 2016 - degruyter.com
Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive
in achieving high-density and low-cost memory and will be required in future. In this chapter …

RRAM-based synapse devices for neuromorphic systems

K Moon, S Lim, J Park, C Sung, S Oh, J Woo… - Faraday …, 2019 - pubs.rsc.org
Hardware artificial neural network (ANN) systems with high density synapse array devices
can perform massive parallel computing for pattern recognition with low power consumption …

Phase-change and redox-based resistive switching memories

DJ Wouters, R Waser, M Wuttig - Proceedings of the IEEE, 2015 - ieeexplore.ieee.org
This paper addresses the two main resistive switching (RS) memory technologies: phase-
change memory (PCM) and redox-based resistive random access memory (ReRAM). It will …

Reconfigurable memristive device technologies

AH Edwards, HJ Barnaby, KA Campbell… - Proceedings of the …, 2015 - ieeexplore.ieee.org
In this paper, we present a review of the state of the art in memristor technologies. Along with
ionic conducting devices [ie, conductive bridging random access memory (CBRAM)], we …

Complementary switching in oxide-based bipolar resistive-switching random memory

F Nardi, S Balatti, S Larentis… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Resistive-switching random access memory (RRAM) devices utilizing a crossbar
architecture represent a promising alternative for Flash replacement in high-density data …

Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

F Yuan, Z Zhang, C Liu, F Zhou, HM Yau, W Lu, X Qiu… - ACS …, 2017 - ACS Publications
Conducting bridge random access memory (CBRAM) is one of the most promising
candidates for future nonvolatile memories. It is important to understand the scalability and …

Improved synapse device with MLC and conductance linearity using quantized conduction for neuromorphic systems

S Lim, C Sung, H Kim, T Kim, J Song… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, we demonstrate the conductive-bridging RAM (CBRAM) with excellent multi-
level cell (MLC) and linear conductance characteristics for an artificial synaptic device of …

RRAM characteristics using a new Cr/GdOx/TiN structure

D Jana, M Dutta, S Samanta, S Maikap - Nanoscale research letters, 2014 - Springer
Resistive random access memory (RRAM) characteristics using a new Cr/GdO x/TiN
structure with different device sizes ranging from 0.4× 0.4 to 8× 8 μm 2 have been reported …