Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one
aspect, there is provided a method of forming an aluminum nitride film comprising the steps …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

Thin Ga 2 O 3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the
precursors through plasma-enhanced atomic layer deposition. The depositions were made …

This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic
layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH3 at a …

The AlON film with homogeneous nitrogen-doping profile was grown by plasma-enhanced
atomic layer deposition (PEALD) at low temperature. In this work, the precursors of the NH3 …

We have investigated the growth characteristics and optical constants of thin AlN films made
by thermal atomic layer deposition (ALD) from trimethylaluminum (TMA) and ammonia (NH …

Passive Silicon Photonic Devices: Design, Fabrication, and TestingPassive Silicon Photonic
Devices: Design, Fabrication, and Tes Page 1 Meth ods Passive Silicon Photonic Devices …

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal
structure with a large band gap of 6.2 eV. AlN thin films have several potential applications …

Excitons in a semiconductor are Coulomb interaction-bound pairs of excited electrons in the
conduction band and holes in the valence band, which can either be free bosonic particles …

The aluminum nitride (AlN) powder/thin films were prepared from an aluminum–urea
complex. The complex, hexa urea aluminate (III) chloride, has proven to be a potential single …