Review of solid-state transformer applications on electric vehicle DC ultra-fast charging station
The emergence of DC fast chargers for electric vehicle batteries (EVBs) has prompted the
design of ad-hoc microgrids (MGs), in which the use of a solid-state transformer (SST) …
design of ad-hoc microgrids (MGs), in which the use of a solid-state transformer (SST) …
Switching techniques and intelligent controllers for induction motor drive: Issues and recommendations
Induction motor drive is widely used in many load applications in approximately 60% of the
total industrial load. However, the dynamic configuration of the induction motor, especially a …
total industrial load. However, the dynamic configuration of the induction motor, especially a …
A self-regulating gate driver for high-power IGBTs
To gain accurate control of the whole switching transients, this article proposes a self-
regulating voltage-source gate drive (SRVSD) method for high-power insulated gate bipolar …
regulating voltage-source gate drive (SRVSD) method for high-power insulated gate bipolar …
An Ultralow Loss Inductorless Filter Concept for Medium-Power Voltage Source Motor Drive Converters With SiC Devices
E Velander, G Bohlin, Å Sandberg… - … on Power Electronics, 2017 - ieeexplore.ieee.org
In this paper, a novel dv/dt filter is presented targeted for 100-kW to 1-MW voltage source
converters using silicon carbide (SiC) power devices. This concept uses the stray …
converters using silicon carbide (SiC) power devices. This concept uses the stray …
Self-adaptive active gate driver for IGBT switching performance optimization based on status monitoring
Compared to the conventional gate driver for the insulated gate bipolar transistor (IGBT), the
active gate driver (AGD) not only reduces the switching delay but also suppresses voltage or …
active gate driver (AGD) not only reduces the switching delay but also suppresses voltage or …
Hybrid Si/SiC switches: A review of control objectives, gate driving approaches and packaging solutions
D Woldegiorgis, MM Hossain… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
Hybrid silicon (Si)/silicon carbide (SiC) switches are gaining increased attention for
designing high-efficiency and high-power density energy conversion systems. They offer …
designing high-efficiency and high-power density energy conversion systems. They offer …
Evaluation of frequency and temperature dependence of power losses difference in parallel IGBTs
With the development of high power converters, safe operation of IGBT modules with
parallel chips is of increasing importance. IGBT can work normally in safe range in the initial …
parallel chips is of increasing importance. IGBT can work normally in safe range in the initial …
Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range
Z Wu, H Jiang, Z Zheng, X Qi, H Mao… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
For silicon carbide power mosfet s, high dv/dt in switching may bring about a high level of
electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load …
electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load …
A fast and soft reverse recovery diode with a Punch-Through NPN structure
X Peng, Y Liu, H Feng, L Huang… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
A fast and soft reverse recovery diode with a Punch-Through (PT) NPN structure is proposed
and experimentally demonstrated. The structure features a P-type Schottky contact, a PT …
and experimentally demonstrated. The structure features a P-type Schottky contact, a PT …
[PDF][PDF] 基于主动栅极驱动的IGBT 开关特性自调节控制
凌亚涛, 赵争鸣, 姬世奇 - TRANSACTIONS OF CHINA …, 2021 - dgjsxb.ces-transaction.com
摘要常规驱动(CGD) 对绝缘栅双极型晶体管(IGBT) 开关特性的控制优化程度有限.
当换流条件改变时, CGD 方法也无法保证器件开关特性可以保持在最优状况 …
当换流条件改变时, CGD 方法也无法保证器件开关特性可以保持在最优状况 …