Review of solid-state transformer applications on electric vehicle DC ultra-fast charging station

S Valedsaravi, A El Aroudi, L Martínez-Salamero - Energies, 2022 - mdpi.com
The emergence of DC fast chargers for electric vehicle batteries (EVBs) has prompted the
design of ad-hoc microgrids (MGs), in which the use of a solid-state transformer (SST) …

Switching techniques and intelligent controllers for induction motor drive: Issues and recommendations

MA Hannan, J Abd Ali, PJ Ker, A Mohamed… - IEEE …, 2018 - ieeexplore.ieee.org
Induction motor drive is widely used in many load applications in approximately 60% of the
total industrial load. However, the dynamic configuration of the induction motor, especially a …

A self-regulating gate driver for high-power IGBTs

Y Ling, Z Zhao, Y Zhu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
To gain accurate control of the whole switching transients, this article proposes a self-
regulating voltage-source gate drive (SRVSD) method for high-power insulated gate bipolar …

An Ultralow Loss Inductorless Filter Concept for Medium-Power Voltage Source Motor Drive Converters With SiC Devices

E Velander, G Bohlin, Å Sandberg… - … on Power Electronics, 2017 - ieeexplore.ieee.org
In this paper, a novel dv/dt filter is presented targeted for 100-kW to 1-MW voltage source
converters using silicon carbide (SiC) power devices. This concept uses the stray …

Self-adaptive active gate driver for IGBT switching performance optimization based on status monitoring

R Wang, L Liang, Y Chen, Y Pan, J Li… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Compared to the conventional gate driver for the insulated gate bipolar transistor (IGBT), the
active gate driver (AGD) not only reduces the switching delay but also suppresses voltage or …

Hybrid Si/SiC switches: A review of control objectives, gate driving approaches and packaging solutions

D Woldegiorgis, MM Hossain… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
Hybrid silicon (Si)/silicon carbide (SiC) switches are gaining increased attention for
designing high-efficiency and high-power density energy conversion systems. They offer …

Evaluation of frequency and temperature dependence of power losses difference in parallel IGBTs

J Yang, Y Che, L Ran, H Jiang - IEEE Access, 2020 - ieeexplore.ieee.org
With the development of high power converters, safe operation of IGBT modules with
parallel chips is of increasing importance. IGBT can work normally in safe range in the initial …

Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range

Z Wu, H Jiang, Z Zheng, X Qi, H Mao… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
For silicon carbide power mosfet s, high dv/dt in switching may bring about a high level of
electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load …

A fast and soft reverse recovery diode with a Punch-Through NPN structure

X Peng, Y Liu, H Feng, L Huang… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
A fast and soft reverse recovery diode with a Punch-Through (PT) NPN structure is proposed
and experimentally demonstrated. The structure features a P-type Schottky contact, a PT …

[PDF][PDF] 基于主动栅极驱动的IGBT 开关特性自调节控制

凌亚涛, 赵争鸣, 姬世奇 - TRANSACTIONS OF CHINA …, 2021 - dgjsxb.ces-transaction.com
摘要常规驱动(CGD) 对绝缘栅双极型晶体管(IGBT) 开关特性的控制优化程度有限.
当换流条件改变时, CGD 方法也无法保证器件开关特性可以保持在最优状况 …