[HTML][HTML] Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

X Zhu, S Dong, F Yu, F Deng, K Shubhakar, KL Pey… - Nanomaterials, 2022 - mdpi.com
A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process
electrostatic discharge (ESD) protection applications is proposed. The transmission line …

Design of dual-direction SCR with high holding voltage for high voltage ESD protection

Y Liu, X Jin - 2022 International EOS/ESD Symposium on …, 2022 - ieeexplore.ieee.org
An improved dual-direction silicon-controlled rectifier (IDDSCR) for high-voltage electrostatic
discharge (ESD) protection applications has been proposed and verified in a 0.18\mum …

ESD Characteristics Improving for DDSCR with NBL by Adding High Voltage N-type Well Isolation in 0.18-μm BCD Technology

Z Deng, Y Wang, Y Zhang, B Yu… - … Symposium on Next …, 2023 - ieeexplore.ieee.org
This paper investigates the effect of High Voltage N-type Well layer (HVNW) on the trigger
voltage, holding voltage and failure current of dual directional Silicon-Controlled Rectifier …

A Novel Latch-Up-Immune DDSCR Used for 12 V Applications

Z Zhu, S Wang, X Fan - 2022 IEEE International Reliability …, 2022 - ieeexplore.ieee.org
In this paper, a high holding voltage dual-directional silicon-controlled rectifier (SCR) with an
embedded shunt path (HVDDSCR-ESP) for high-voltage I/O electrostatic discharge (ESD) …

Novel Staircase Wave ESD Testing Method for Accurate Latch-Up Evaluation

Z Qi, Y Shi, M Qiao, F Zhao… - 2022 International EOS …, 2022 - ieeexplore.ieee.org
With the development of the electrostatic discharge (ESD) protection devices, different
protection strategies are proposed to increase ESD latch-up immunity, such as high holding …

[引用][C] 一种防闩锁的多嵌入阱SCR ESD 器件

侯佳力, 胡毅, 贺俊敏, 王源 - Microelectronics, 2022 - 微电子学编辑部