Abstract Nanoporous Gd 2 O 3 powders (NGPs) with different specific surface areas were
prepared by a non-aqueous sol-gel method and utilized to tune the exothermal …

This paper describes the structural and electrical properties of thin films grown through
atomic layer deposition onto Ge substrates over a wide deposition temperature range. From …

We investigated the electrical properties and reverse leakage mechanisms of Pt/n-Ge
Schottky contacts with copper phthalocyanine (CuPc) as an interlayer. The current-voltage …

A systematic study of chemical, structural and electrical properties of Sm 2 O 3 gate stack
has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal …

In recent years germanium has been emerging as a mainstream material that could have
important applications in the microelectronics industry. The principle aim of this study is to …

The aim of present study is to improve the quality of Gd 2 O 3/p-Si MOS structure by reducing
interface trap charge density. Therefore, the ultra-thin SiO 2 layer was grown to high-k/Si …

La2O3 grown by atomic layer deposition (ALD) and thermally grown GeO2 are used to
establish effective electrical surface passivations on n-type (100)-Ge substrates for high-k …

High-kappa films are currently deposited on Ge substrates to compensate the mobility loss,
as Ge offers higher mobility compared with that of silicon. This paper deals with the reliability …

The influence of different thermal oxidation/nitridation durations (5, 10, 15, and 20 minutes)
at 400° C for transforming metallic Ho sputtered on Ge substrate in N2O gas ambient have …

This study explores the growth and structural characteristics of N d 2 O 3 layers on virtual
germanium-rich SiGe substrates on Si (111). We focus on the emergence of the hexagonal …